Dynamic refresh that changes the physical storage locations of data in flash memory

Abstract

A multi-bit-per-cell non-volatile memory performs refresh operations that move data to different physical storage locations. The movement of data may extend the life of a non-volatile memory by avoiding repetitive erasing and writing of the same data value in the same memory cell. A memory mapping circuit in the memory adjusts for different storage configuration that the refresh operations create. In particular embodiments, shifts sectors-sized data blocks cyclically among sectors in an array, a bank, or an entire memory or alternatively shifts the data blocks between two configurations.